A. Ponchet et al., THE EFFECT OF THE GROWTH PROCEDURE AND THE INAS AMOUNT ON THE FORMATION OF STRAIN-INDUCED ISLANDS IN THE INAS INP(001) SYSTEM/, Applied surface science, 123, 1998, pp. 751-756
Citations number
22
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Using the strain-induced 2D-3D transition, InAs dots have been grown o
n InP(001) by gas source molecular beam epitaxy and examined by transm
ission electron microscopy. Various InAs amounts have been deposited,
and the islands were either capped or uncapped. Small strained islands
, large strained ones, and plastically relaxed ones were observed, sho
wing that different degrees of relaxation have been achieved depending
on these growth parameters. Comparison of capped and uncapped islands
showed that the island evolution was stopped by the island coverage.
The comparison of islands obtained for different deposited amounts sug
gests that the inter-island interactions can delay the island evolutio
n towards a higher degree of relaxation. Finally, the elastic interact
ion between islands was calculated by the finite-element method. (C) 1
998 Elsevier Science B.V.