STUDIES ON THE MECHANISM OF CHEMICAL-REACTIONS DURING TIXNY LAYERS DEPOSITION

TiN layers are widely applied in modern technology, e.g. as coating fo r solar cells, for the preparation of hot mirrors, in jewellery, as we ll as in medicine for implant coating. Among the methods of TiN layer preparation chemical vapour deposition (CVD) seems the most useful. De position of TiN layers by CVD involves chemical processes which, apart from adsorption and desorption, include chemical reactions in the gas phase. The present work is a direct study of the gas phase during the chemical vapour deposition of titanium nitrides at low temperatures ( 300-1270 K). The gas phase was investigated by means of FTIR spectrosc opy in the in situ conditions. The layers were deposited from(TiCl4 H-2 + N-2) mixtures diluted with argon in a special reaction cell.