EFFECTS OF N2O-ANNEALED SACRIFICIAL OXIDE ON THE SHORT-CHANNEL EFFECTS OF NMOSFETS

Authors
JONG FC HUANG TY CHAO TS LIN HC WANG MF CHANG CY
Citation
Fc. Jong et al., EFFECTS OF N2O-ANNEALED SACRIFICIAL OXIDE ON THE SHORT-CHANNEL EFFECTS OF NMOSFETS, Electronics Letters, 34(4), 1998, pp. 404-406
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
4
Year of publication
1998
Pages
404 - 406
Database
ISI
SICI code
0013-5194(1998)34:4<404:EONSOO>2.0.ZU;2-3
Abstract
The authors report the effects of N2O-annealed sacrificial oxide on nM OSFETs. It is demonstrated that by adding an N2O-annealing step to the sacrificial. oxide which was stripped off before growing the final ga te oxide, the reverse short-channel effects (RSCE) can still be effect ively suppressed.