GAINP ALINP TUNNEL JUNCTION FOR GAINP/GAAS TANDEM SOLAR-CELLS/

Authors
LI W LAMMASNIEMI J KAZANTSEV AB JAAKKOLA R MAKELA T PESSA M
Citation
W. Li et al., GAINP ALINP TUNNEL JUNCTION FOR GAINP/GAAS TANDEM SOLAR-CELLS/, Electronics Letters, 34(4), 1998, pp. 406-407
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
4
Year of publication
1998
Pages
406 - 407
Database
ISI
SICI code
0013-5194(1998)34:4<406:GATJFG>2.0.ZU;2-L
Abstract
A GaInP/AlInP tunnel diode has been growth by a gas-source molecular b eam epitaxy method. A high conductance of 15 mA/cm(2) at 2.7 mV has be en achieved. Using closely optimised with conditions, very high carrie r concentrations, both in GaInP and AlInP, have been obtained.