SI AND SIC LAYER TRANSFER BY HIGH-TEMPERATURE HYDROGEN IMPLANTATION AND LOWER TEMPERATURE LAYER SPLITTING

Authors
TONG QY LEE TH HUANG LJ CHAO YL GOSELE U
Citation
Qy. Tong et al., SI AND SIC LAYER TRANSFER BY HIGH-TEMPERATURE HYDROGEN IMPLANTATION AND LOWER TEMPERATURE LAYER SPLITTING, Electronics Letters, 34(4), 1998, pp. 407-408
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
4
Year of publication
1998
Pages
407 - 408
Database
ISI
SICI code
0013-5194(1998)34:4<407:SASLTB>2.0.ZU;2-4
Abstract
High quality Si and SiC layers which were implanted by H at 400 and 80 0 degrees C, respectively, were transferred onto an Si substrate and g lass by wafer bonding and layer splitting at temperatures lower than t he corresponding H-implantation temperatures.