TRANSFER OF 3 IN GAAS FILM ON SILICON SUBSTRATE BY PROTON IMPLANTATION PROCESS

Authors
JALAGUIER E ASPAR B POCAS S MICHAUD JF ZUSSY M PAPON AM BRUEL M
Citation
E. Jalaguier et al., TRANSFER OF 3 IN GAAS FILM ON SILICON SUBSTRATE BY PROTON IMPLANTATION PROCESS, Electronics Letters, 34(4), 1998, pp. 408-409
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
4
Year of publication
1998
Pages
408 - 409
Database
ISI
SICI code
0013-5194(1998)34:4<408:TO3IGF>2.0.ZU;2-W
Abstract
For the first time, transfer of a thin monocrystalline GaAs film from its original bulk substrate onto a silicon substrate was achieved hy p roton implantation and wafer bonding. Successful transfers of 3 in GaA s film are presented.