V-BAND HIGH-POWER LOW-VOLTAGE INGAAS/INP COMPOSITE CHANNEL HEMTS/

Authors
CHEVALIER P WALLART X BONTE B FAUQUEMBERGUE R
Citation
P. Chevalier et al., V-BAND HIGH-POWER LOW-VOLTAGE INGAAS/INP COMPOSITE CHANNEL HEMTS/, Electronics Letters, 34(4), 1998, pp. 409-411
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
4
Year of publication
1998
Pages
409 - 411
Database
ISI
SICI code
0013-5194(1998)34:4<409:VHLICC>2.0.ZU;2-8
Abstract
The authors have developed 0.15 mu m gate length InAlAs/lnGaAs/InP com posite channel HEMTs with state-of-the-art power performance at 60 GHz . An output power of 355 mW/mm was obtained with 6.2 dB linear Fewer g ain and 12% power-added efficiency at a drain voltage of 2.5 V.