ANTIMONY ADSORPTION ON INAS(110)

The overlayer growth of the Sb/InAs(110) interface has been investigat ed for room-temperature (RT) deposition and subsequent annealing, by m eans of Auger and core-level photoemission spectroscopy. Antimony form s an unreactive and epitaxial monolayer, followed by three-dimensional island growth. The surface electronic transitions above the semicondu ctor bulk gap and Sb-induced electronic states have been studied by me ans of photoemission and high-resolution electron-energy-loss spectros copy. The Sb/InAs(110) interface is semiconducting and the (1X1) Sb st ructure, obtained after a thermal annealing at 600 K, presents a surfa ce band gap of 0.42 eV at RT. Schottky barrier height, derived from th e energy shift of the In core-level emission lines, is about 0.7 eV wi th respect to the valence-band maximum. The evolution of the space-cha rge layer with the formation of an accumulation layer has been deduced from the dopant-induced free-carrier plasmon. The accumulation layer and the Schottky barrier height are reduced when the annealing procedu re reorders the surface to obtain the (1X1) two-dimensional structure. [S0163-1829(98)01707-X].