IMPLANTATION AND DAMAGE UNDER LOW-ENERGY SI SELF-BOMBARDMENT

Using molecular-dynamics simulations, we study the implantation of 50- and 100-eV Si atoms into (100) 2x1, (110), and (111) Si monocrystals and the induced damage. The dependence of the ion range and the damage distribution on the target crystal surface is discussed. The size of the near-surface disordered zones created by the ion impact is studied , and compared to experimental data for the critical fluence of Si amo rphization. The fate of such a disordered zone-under thermal annealing is studied for a representative case. Target atom relocation and adat om formation are investigated. [S0163-1829(98)04408-7].