HOPPING CONDUCTION IN PARTIALLY COMPENSATED DOPED SILICON (VOL 48, PG2312, 1993)

Citation
J. Zhang et al., HOPPING CONDUCTION IN PARTIALLY COMPENSATED DOPED SILICON (VOL 48, PG2312, 1993), Physical review. B, Condensed matter, 57(8), 1998, pp. 4950-4950
Citations number
1
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
57
Issue
8
Year of publication
1998
Pages
4950 - 4950
Database
ISI
SICI code
0163-1829(1998)57:8<4950:HCIPCD>2.0.ZU;2-R