K. Wasa et al., CONTINUOUS SINGLE-CRYSTAL PBTIO3 THIN-FILMS EPITAXIALLY GROWN ON MISCUT (001)SRTIO3, Journal of the Korean Physical Society, 32, 1998, pp. 1344-1348
Continuous single crystal (001)PbTiO3 (PT) thin films, 5 to 300 nm in
thickness, were epitaxially grown on miscut (001)SrTiO3 (ST), miscut a
ngle 1.7 degree, by rf-planar magnetron sputtering. The surface of the
miscut substrates comprised periodic striped patterns with periodic s
tep lines and terraces; the step height was 0.4 nm and terrace width w
as 14 nm. The surface of PT thin films also comprised periodic striped
patterns; the step height was 1 to 3 nm and the terrace width was 50
to 150 nn. The film growth was governed by a step-flow growth with ste
p-bunching. The layer growth mode of Frank-van der Merwe type was pred
ominant and the surface was extremely hat on an atomic scale. The resu
ltant epitaxial films showed a single crystal/single c-domain structur
e. Epitaxial growth on miscut substrate is essential to fabricate pero
vskite thin films with controlled microstructure.