BASIC CHARACTERISTICS OF SRBI2TA2O9 SIO2/SI STRUCTURE/

Voltage dependence of high-frequency capacitance of metal-ferroelectri c-SiO2-Si structure has been analyzed by solving the potential profile . Dielectric polarization required to control Si surface potential is very small in comparison with the conventional remanent polarization. SrBi2Ta2O9/SiO2/Si structure has been prepared by laser ablation of Sr Bi2Ta2O9 film on SiO2/Si at low temperatures of 400-550 degrees C. SrB i2Ta2O9 films have a good (105) preferential orientation. SrBi2Ta2O9/S iO2/Si structures show good C-V hysteresis curve. Dielectric hysteresi s of the SrBi2Ta2O9 film in SrBi2Ta2O9/SiO2/Si structure has been obta ined by analyzing the C-V characteristics. MFIS-FET using SrBi2Ta2O9 f ilm has been fabricated and shows good memory characteristic.