BATI0.91(HF0.5ZR0.5)(0.09)O-3 THIN-FILMS PREPARED BY ND3-ABLATION(YAG(LAMBDA=266 NM) LASER)
Citation
Y. Masuda et al., BATI0.91(HF0.5ZR0.5)(0.09)O-3 THIN-FILMS PREPARED BY ND3-ABLATION(YAG(LAMBDA=266 NM) LASER), Journal of the Korean Physical Society, 32, 1998, pp. 1372-1374
Categorie Soggetti
Physics
SICI code
0374-4884(1998)32:<1372:BTPBN>2.0.ZU;2-O
Abstract
We have demonstrated synthesis of BaTi(Hf0.5Zr0.5)O-3 (BTHZ) thin film
s using the fourth harmonic wave of a pulsed YAG (FHG-YAG) laser, for
the first time. The BTHZ thin films with a preferred orientation in th
e c-axis are successfully synthesized and can be carried out under an
oxygen gas pressure of 3 Pa at 800 degrees C. Crystallinity of the dep
osited films seems to depend on the distance between atoms of each ele
ment.