THE STRUCTURE AND SURFACE-MORPHOLOGY OF MG2TIO4 THIN-FILMS ON SI(100)BY MOCVD

Citation
Sx. Shang et al., THE STRUCTURE AND SURFACE-MORPHOLOGY OF MG2TIO4 THIN-FILMS ON SI(100)BY MOCVD, Journal of the Korean Physical Society, 32, 1998, pp. 1378-1379
Citations number
4
Categorie Soggetti
Physics
ISSN journal
03744884
Volume
32
Year of publication
1998
Part
4
Supplement
S
Pages
1378 - 1379
Database
ISI
SICI code
0374-4884(1998)32:<1378:TSASOM>2.0.ZU;2-R
Abstract
In this paper, we report the preparation and surface morphology of Mg2 TiO4 thin films on (100) si substrate by atmospheric pressure metalorg anic chemical vapor deposition technique. The source materials used we re Mg(acac)(2) and titanium isopropoxied. Under optimized growth condi tion, the as-grown films were specular, dense and crack-free, X-ray di ffraction analysis (XRD), and electron diffraction (ED) pattern showed that the Mg2TiO4 films were single crystal thin films. The effects of growth velocity on the surface morphology were also studied.