FATIGUE PROPERTIES OF PB(ZR0.52TI0.48)O-3 THIN-FILMS DEPOSITED ON LANIO3 ELECTRODE

(100)-oriented LaNiO3 (LNO) thin films were deposited on Si, SiO2/Si, Pt/Ti/SiO2/Si substrates by rf-magnetron sputtering at 300 degrees C. Pb(Zr0.52Ti0.48)O-3 (PZT) thin films were spin-coated subsequently ont o the LNO bottom electrode, which were oriented highly c-and a-axis. T he PZT ferroelectric capacitors fabricated with Pt or LNO electrods di splayed a good D-E hysteresis characteristic. As the results of applyi ng bipolar pulses to the thin films to observe the polarization fatigu e, the LNO/PZT/LNO structure was found to improve significantly the fa tigue resistance of PZT films as compared to that with Pt electrode. T he effects of the LNO electrodes on the characteristics of polarizatio n fatigue for PZT films were discussed.