LA1-XSRXCOO3 AS ELECTRODE MATERIALS FOR FERROELECTRIC THIN-FILM APPLICATIONS

PZT thin films for memory applications are known to lack sufficient re sistance versus polarization fatigue when used together with platinum. One possible solution for this problem is to use conductive oxides li ke La1-xSrxCoO3 (LSCO) as an electrode. In this paper LSCO thin films were deposited via RF magnetron sputter deposition (face to face confi guration) from a single oxide target. Changing the layer beneath LSCO at 750 degrees C and an RF Power of 50 W on SiO2/Si, the film is sligh tly (100) textured. A. strong (111) texture is established in case of a TiO2/Pt/TiO2/SiO2/Si. In contrary, a strong c-axis orientation could be observed on Pt/TiO2/SiO2/Si.