MULTIWAFER MOCVD SYSTEMS FOR FERROELECTRICS

To meet the demand for economical production of the raw material - thi n film structures of ferroelectrics - we developed a metalorganic vapo r phase epitaxy (MOVPE) reactor for the deposition of the material fil ms on a large substrate area (total substrate area of 0.25 square mete rs). By rotating the wafers, the growth rate along the direction of fl ow is averaged to produce uniform films with an expected variation of less than +/-1.5% in composition and +/-2% in thickness across an area with a diameter of 10 inches.