LARGE-AREA PULSED-LASER DEPOSITION OF BI-LAYERED FERROELECTRIC THIN-FILMS

Ferroelectric thin films of Bi4Ti3O12 and SrBi2Ta2O9, the most studied Pi-layered perovskites, have been deposited on substrates up to 3 inc h in diameter by the so-called off-axis Pulsed Laser Deposition (PLD) technique. This technique allows deposition with a good uniformity ont o entire silicon or silicon-based S-inch wafers. In order to promote e pitaxial growth, the Bi4Ti3O12 and SrBi2Ta2O9 thin films have also bee n deposited onto epitaxial thin film templates of CeO2/YSZ and on the conductive oxide (La1-xSrx)CoO3 (LSCO), itself deposited on a CeO2/YSZ epitaxial template. These electrode and buffer layers have been depos ited by off-axis PLD as well. The thickness and composition uniformity of the ferroelectric films, electrodes and buffer layers are importan t parameters with regard to their possible application in integrated m icroelectronics. The thickness uniformities achieved are in the range of 5% to 15% of the mean thickness, depending on the material and depo sition conditions.