PIEZOELECTRIC CHARACTERISTICS OF C-AXIS ORIENTED PB(ZR,TI)O-3 THIN-FILMS

Citation
I. Kanno et al., PIEZOELECTRIC CHARACTERISTICS OF C-AXIS ORIENTED PB(ZR,TI)O-3 THIN-FILMS, Journal of the Korean Physical Society, 32, 1998, pp. 1481-1484
Citations number
10
Categorie Soggetti
Physics
ISSN journal
03744884
Volume
32
Year of publication
1998
Part
4
Supplement
S
Pages
1481 - 1484
Database
ISI
SICI code
0374-4884(1998)32:<1481:PCOCOP>2.0.ZU;2-X
Abstract
Piezoelectric properties as well as crystalline structures of the c-ax is oriented Pb(Zr,Ti)O-3 (PZT) thin films were investigated. The PZT f ilms with a composition near the morphotropic phase boundary were depo sited on (100)Pt/MgO substrates using rf-magnetron sputtering. Cross-s ectional TEM observation demonstrated that the PZT films were single-c rystalline structures without 90 degrees domains. Using the PZT films of 3.2 mu m in thickness, unimorph cantilevers with PZT/polyimide stru cture were microfabricated and their piezoelectric behavior was observ ed. For the microcantilevers of 500 mu m in length, large deflection a bout 6 mu m at 30 V could be obtained without a poling treatment for t he PZT films. The excellent piezoelectric coefficient d(31) of 84 simi lar to 105 x 10(-12) m/V was derived from the deflection of the cantil evers.