REACTIVE ION ETCHING OF PT THIN-FILMS FOR FABRICATION OF MICROCAPACITOR

The reactive ion etching (RIE) of Pt thin film was carried out in CCl2 F2/Ar plasma to investigate etching mechanism of Pt thin film. Etch ra te depends strongly on the composition variation of CCl2F2 and Ar plas ma. A kind of synergistic effect was found in Pt dry etching: chemical ly enhanced physical etching or physically enhanced chemical etching. It frequently occurs in RIE of other materials such as oxides and nitr ides. Therefore the profile, etch rate and selectivity could be contro lled by gas composition. We fabricated Pt storage node for Gbit scale DRAM successfully.