DEPOSITION AND CHARACTERIZATION OF MOCVD PT FILM AS A TOP ELECTRODE FOR HIGH DIELECTRIC FILM

Authors
LEE JM SHIN JC KIM KS CHO HJ KIM HJ HWANG CS SUK CG
Citation
Jm. Lee et al., DEPOSITION AND CHARACTERIZATION OF MOCVD PT FILM AS A TOP ELECTRODE FOR HIGH DIELECTRIC FILM, Journal of the Korean Physical Society, 32, 1998, pp. 1535-1537
Citations number
6
Categorie Soggetti
Physics
Journal title
Journal of the Korean Physical Society → ACNP
ISSN journal
03744884
Volume
32
Year of publication
1998
Part
4
Supplement
S
Pages
1535 - 1537
Database
ISI
SICI code
0374-4884(1998)32:<1535:DACOMP>2.0.ZU;2-2
Abstract
Pt thin films were deposited by metal organic chemical vapor depositio n (MOCVD) and characterized as a top electrode for high dielectric thi n films. The microstructure of Pt thin films was affected by depositio n temperature and the amount of O-2 gas addition during the deposition . The growth rate of Pt films on BST/Pt/SiO2/Si was higher than those on SiO2/Si. Pt thin films showed a high electric conductivity of below 15 mu Omega cm and a good step coverage of above 80% which indicate t hat MOCVD Pt can be applied for top electrode of BST capacitors in ULS I DRAM.