STRUCTURAL CHARACTERIZATION OF TIO2 THIN-FILMS ON GAAS(100) SUBSTRATEBY MOCVD

Titanium dioxide (TiO2) thin films have been grown on GaAs(100) substr ate by metal organic chemical vapor deposition (MOCVD). X-ray diffract ion patterns showed that the TiO2 thin films for deposition temperatur e T-s < 400 degrees C had polycrystalline anatase phase dominantly, wh ile the films for T-s > 600 degrees C had mixture of polycrystalline a natase and rutile phases. No interface reaction between the TiO2 film and GaAs substrate for the film deposited at 400 degrees C was observe d by scanning electron microscopy and transmission electron microscopy . However, an interdiffusion reaction occurred severely in the TiO2 fi lm gown at T-s = 650 degrees C with a partial crystallization at the i nterface.