STRUCTURE AND ELECTRICAL-PROPERTIES OF BA1-XSRXTIO3 (BST) THIN-FILMS FABRICATED BY SOL-GEL METHOD

Thin films of Ba0.5Sr0.5TiO3 were fabricated on the RuO2/Ru/SiO2/Si su bstrate by the spin coating of the multicomponent sol prepared using m etal alkoxides. Boron alkoxide was intentionally introduced to establi sh a better microstructure and to reduce the leakage current. AFM stud y indicated that a crack-free uniform microstructure having a smooth s urface was gradually developed with increasing boron content. The rela tive dielectric permittivity of the 250 nm-thick BST thin films fired at 700 degrees C decreased with increasing content of boron, from 420 for the undoped film to 190 for the 10 mol% boron-added film at 1 MHz. The leakage current density (J) also decreased with the amount of bor on added. The leakage current for the applied voltage greater than 1 V showed a linear variation of logJ with E-1/2 at room temperature, sug gesting that the interface-controlled Schottky emission was the domina nt conduction process for the BST thin films fabricated on the RuO2 el ectrode.