STRUCTURAL AND ELECTRICAL-PROPERTIES OF BI4TI3O12 FILMS GROWN ON VERYTHIN THERMAL SILICON-OXIDE LAYERS

Bi4Ti3O12 (BTO) thin films were grown on thermally oxidized Si substra tes by pulsed laser deposition. X-ray diffraction studies showed that deposition temperature was an important parameter which influenced gro wth behaviors and physical properties of the thin films. Highly c-axis oriented BTO films were obtained at 650 degrees C, however, (117) ori ented films were grown at 500 degrees C. The Au/BTO/SiO2/Si structure showed good electrical properties for ferroelectric field effect trans istor application, even though the thickness of silicon oxide layer wa s as thin as 40 Angstrom.