FERROELECTRIC PROPERTIES OF MULTILAYERED SRBI2TA2O9 PB(ZR,TI)O-3 THIN-FILM CAPACITOR/

We have investigated the ferroelectric properties of multilayered Pb(Z r,Ti)O-3/SrBi2Ta2O9 (PZT/SBT) thin film capacitors. Specimens were pre pared onto platinized silicon wafers by sol-gel method. Ferroelectric properties of these films could be obtained only for thin SET layers b elow 50 nm in thickness. The values of dielectric constant and remnant polarization depend mainly on the thickness of SET layer. This behavi or arises from the paraelectric interface layer between SET and PZT du e to the thermal diffusion of Pb. The value of remnant polarization of PZT/SBT is greater than that of SET, and the polarization fatigue beh aviors of PZT/SBT capacitors are somewhat improved as compared with th ose of PZT.