A NOVEL BOTTOM ELECTRODE FOR FERROELECTRIC DEVICES

Citation
Jt. Evans et al., A NOVEL BOTTOM ELECTRODE FOR FERROELECTRIC DEVICES, Journal of the Korean Physical Society, 32, 1998, pp. 1578-1579
Citations number
7
Categorie Soggetti
Physics
ISSN journal
03744884
Volume
32
Year of publication
1998
Part
4
Supplement
S
Pages
1578 - 1579
Database
ISI
SICI code
0374-4884(1998)32:<1578:ANBEFF>2.0.ZU;2-J
Abstract
A major obstacle to the manufacture of ceramic based memories is the p atterning of the platinum bottom electrode. Normally, fine features in platinum must be formed with expensive ion milling or plasma etching processes. It is possible with a special lift-off pattering process to create fine features in the platinum bottom electrode process which c an produce 1.5 micron platinum lines with 2 micron gaps in a manufactu ring environment.