LOW-TEMPERATURE PREPARATION OF PMN-PT FILMS WITH HIGH-DIELECTRIC CONSTANT BY LASER-ABLATION

Authors
MATSUMURO Y OISHI Y OKUYAMA M
Citation
Y. Matsumuro et al., LOW-TEMPERATURE PREPARATION OF PMN-PT FILMS WITH HIGH-DIELECTRIC CONSTANT BY LASER-ABLATION, Journal of the Korean Physical Society, 32, 1998, pp. 1625-1628
Citations number
7
Categorie Soggetti
Physics
Journal title
Journal of the Korean Physical Society → ACNP
ISSN journal
03744884
Volume
32
Year of publication
1998
Part
4
Supplement
S
Pages
1625 - 1628
Database
ISI
SICI code
0374-4884(1998)32:<1625:LPOPFW>2.0.ZU;2-X
Abstract
Lead magnesium niobate titanate, 0.9Pb(Mg1/3Nb2/3)O-3-0.1PbTiO(3) (0.9 PMN-0.1PT) thin films have been prepared on Pt sheets at low temperatu res of 450-600 degrees C. 0.9PMN-0.1PT thin films have (100), (200) an d (110) orientations on Pt sheet. Surface morphology of 0.9PMN-0.1PT f ilms on Pt has square grains of size 100-150 nm. Crystalline property has been characterized by Raman scattering. Dielectric constant at roo m temperature of 0.9PMN-0.1PT thin films is about 1280 at 1 MHz.