LOW-FREQUENCY DIELECTRIC RESPONSES OF PZT THIN-FILM CAPACITORS

Temperature and frequency dispersion of the dielectric constant was in vestigated on the ferroelectric Pb(Zr0.53Ti0.47)O-3 [PZT] thin films, which were prepared by sol-gel spin-on process using 0.4M PZT solution . PZT deposited on Pt-coated Si substrates exhibited a large dielectri c dispersion over the temperature range from room temperature to 320 d egrees C and over the frequency range from 10(-2) Hz to 100 kHz. The d ielectric relaxation was observed below 10 kHz above 230 degrees C, wh ich was interpreted based on a dipole relaxation of the Cole-Cole type . Low-frequency dielectric relaxation is attributed to the lead and ox ygen vacancies complex dipoles in PZT film. The thermal activation ene rgy for the relaxation process of ionized space-charge carriers in PZT film was 1.61 eV.