GROWTH OF ORIENTED LINBO3 THIN-FILMS ON SI SUBSTRATE WITH SRO-SIO2 COMPOSITE BUFFER LAYER BY THE SOL-GEL METHOD

The structural properties of LiNbO3 thin films deposited on buffered S i by the sol-gel process have been investigated. SrO-SiO2 composite bu ffer layer was also grown by the sol-gel method. X-ray diffraction sho ws that either (110) or (001) oriented LiNbO3 films were grown on the buffer layer. Rutherford backscattering spectrometry (RES) reveals tha t the buffer layer isa composite film of SrO . 2SiO(2) and stable agai nst diffusion under the heat-treatments. Formation of the composite bu ffer layer and the growth orientation of LiNbO3 films are discussed in conjunction with the crystallization and the structure of the buffer layer.