CHARACTERIZATION OF METAL-DOPED PB(ZR0.52TI0.48)O-3 THIN-FILMS PREPARED BY SOL-GEL METHOD

Authors
LEE SH LEE SJ KIM SH CHAE BG YANG YS JOO HJ KIM JP PARK WS JANG MS
Citation
Sh. Lee et al., CHARACTERIZATION OF METAL-DOPED PB(ZR0.52TI0.48)O-3 THIN-FILMS PREPARED BY SOL-GEL METHOD, Journal of the Korean Physical Society, 32, 1998, pp. 1670-1672
Citations number
13
Categorie Soggetti
Physics
Journal title
Journal of the Korean Physical Society → ACNP
ISSN journal
03744884
Volume
32
Year of publication
1998
Part
4
Supplement
S
Pages
1670 - 1672
Database
ISI
SICI code
0374-4884(1998)32:<1670:COMPTP>2.0.ZU;2-7
Abstract
Nd3+ and Ni2+ doped Pb(Zr0.52Ti0.48)O-3 (PZT) thin films were prepared by sol-gel method on Pt/Ti/SiO2/Si substrates. The crystal structure, the dielectric and ferroelectric properties of metal doped PZT films were investigated. The crystal structure and surface morphologies of t his films depended on Nd and Ni concentration. The dielectric constant of Nd doped PZT films increased with Nd concentration, The polarizati on and coercive field depended on Nd and Ni concentration.