Ws. Park et al., PEROVSKITE FORMATION AND DIELECTRIC-PROPERTIES OF PB(ZN1 3NB2/3)O-3 BASED THIN-FILMS BY SOL-GEL METHOD/, Journal of the Korean Physical Society, 32, 1998, pp. 1673-1675
(Pb0.75Ba0.25)(Zn1/3Nb2/3)O-3 (PBZN) and (Pb0.75Sr0.25)(Zn1/3Nb2/3)O-3
(PSZN) thin films were prepared by sol-gel method to check the possib
ility of multilayer capacitor (MLC) application. The perovskite phases
of these thin films were well formed well at 950 degrees C and 900 de
grees C, respectively, and the capacitances of these films were reduce
d only 7% and 0.1% by 10 V of de-bias, respectively. Furthermore, the
temperature-dependence of the capacitance of PSZN was was very small u
p to 300 degrees C. The frequency dispersion also was not observed in
the range of 100 Hz and 1 MHz. In conclusion, PSZN are probable candid
ates for MLC application.