PEROVSKITE FORMATION AND DIELECTRIC-PROPERTIES OF PB(ZN1 3NB2/3)O-3 BASED THIN-FILMS BY SOL-GEL METHOD/

Citation
Ws. Park et al., PEROVSKITE FORMATION AND DIELECTRIC-PROPERTIES OF PB(ZN1 3NB2/3)O-3 BASED THIN-FILMS BY SOL-GEL METHOD/, Journal of the Korean Physical Society, 32, 1998, pp. 1673-1675
Citations number
15
Categorie Soggetti
Physics
ISSN journal
03744884
Volume
32
Year of publication
1998
Part
4
Supplement
S
Pages
1673 - 1675
Database
ISI
SICI code
0374-4884(1998)32:<1673:PFADOP>2.0.ZU;2-Y
Abstract
(Pb0.75Ba0.25)(Zn1/3Nb2/3)O-3 (PBZN) and (Pb0.75Sr0.25)(Zn1/3Nb2/3)O-3 (PSZN) thin films were prepared by sol-gel method to check the possib ility of multilayer capacitor (MLC) application. The perovskite phases of these thin films were well formed well at 950 degrees C and 900 de grees C, respectively, and the capacitances of these films were reduce d only 7% and 0.1% by 10 V of de-bias, respectively. Furthermore, the temperature-dependence of the capacitance of PSZN was was very small u p to 300 degrees C. The frequency dispersion also was not observed in the range of 100 Hz and 1 MHz. In conclusion, PSZN are probable candid ates for MLC application.