PREPARATION OF BISMUTH LAYERED SRBI2TA2O9 THIN-FILMS BY RF MAGNETRON SPUTTERING

SrBi2Ta2O9 (SET) ferroelectric thin films for nonvolatile memory were prepared on Pt/Ti/SiO2/Si and RuO2/SiO2/Si substrates by the RF magnet ron sputtering method. The effects of conducting electrode types (Pt a nd RuO2) and the annealing temperatures were investigated in terms of crystallization and electrical properties. The SET films were exhibite d typical Pi layered perovskite structures and the crystalline quality was improved by post-annealing at 650 degrees C for 30 s. The anneale d SET films exhibited ferroelectric properties with 2Pr (Pr+ - Pr-) of 11 mu C/cm(2) for SBT/Pt/Ti/SiO2/Si and 3 mu C/cm(2) for SBT/RuO2/SiO 2/Si film samples, respectively. The annealed SET films showed no degr adation after 10(11) polarization switching cycles indicating good fat igue properties.