THE FERROELECTRIC PROPERTIES OF SOL-GEL DERIVED PLZT THIN-FILM FOR HIGH-DENSITY FERAM APPLICATION

The PLZT thin film were fabricated from the stable sol synthesized thr ough a new chemical route using acetylacetone as a complexing agent. T he fabricated ferroelectric capacitors were evaluated from the criteri a for high density non-volatile memory applications. The fatigue endur ance characteristics was improved as La content increases up to 7.5%, by the presumable mechanism of oxygen vacancy reduction. No change in P-P boolean AND value was measured up to 6x10(10) cycles with La 7.5% PLZT. However, the increased paraelectric component with increased La content reduced P-P boolean AND value below 20 mu m/cm(2), the crite ria set in this experiment for high density application when La conten t is over 5%. The PLZT with 2.5% La maintained P-P boolean AND, large r than 20 mu m/cm(2) up to 5x10(10) cycle at 5 V and the leakage curre nt at -5 V was 3x10(-8) A.