CHARACTERIZATION OF C-AXIS ORIENTED SRBI2TA2O9 FERROELECTRIC THIN-FILMS DEPOSITED BY PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITIONON MOCVD-PT SIO2/SI/

The c-axis oriented ferroelectric SrBi2Ta2O9 (SBT) thin films have bee n prepared successfully using plasma-enhanced metalorganic chemical va por deposition (PEMOCVD) at 550 degrees C on the annealed Pt(lll)/SiO2 /Si substrates. The c-axis oriented SET thin films deposited on the an nealed Pt was observed to have well-aligned microstructures by the X-r ay diffraction. The c-axis oriented SET films exhibit very small reman ent polarization (2P(r)) of 3.2 mu C/cm(2) and the coercive field (2E( c)) of 98.2 kV/cm with 5 V excitation. The leakage currents were about 7.0 x 10(-7) A/cm(2) at 275 kV/cm. The films also showed fatigue-free characteristics up to 7.0 x 10(9) switching cycles. The c-axis orient ed SET capacitors deposited by PEMOCVD at 550 degrees C were attractiv e for application to nonvolatile memory devices.