ELECTRICAL-PROPERTIES OF NB-DOPED SRTIO3 THIN-FILMS GROWN BY PULSED-LASER DEPOSITION

Highly oriented thin films of Nb-doped SrTiO3, SrNbxTi1-xO3(x = 0 simi lar to 1), were grown on MgO(100) and SrTiO3(100) substrates by using the pulsed laser deposition method. Electrical properties of these fil ms were investigated by conductivity measurements. The oxygen pressure during deposition as well as doping content crucially affected conduc tivities of the films in a way that as the oxygen pressure decreased c onductivity increased. Exponential decrease of conductivities as a fac tion of the inverse temperature were fitted with the Arrhenius equatio n and the variation of the activation energies for conduction was inve stigated. As the concentration of Nb increased, the thin films showed the transition from semiconductive to metallic state.