FABRICATION OF CUCL QUANTUM DOTS AND BIEXCITON PHOTOLUMINESCENCE SPECTRA

Semiconductor doped glass was prepared for optical measurement. The av erage size of microcrystallites were controlled by heat-treatment. Bas ed on the quantum size effect, the average radius of quantum dots were calculated. Spin-orbit splitting energy Delta and biexciton binding e nergy also were calculated from linear absorption and photoluminescenc e data, respectively. Intensity of excitonic bands and biexcitonic ban ds were increased with densities of exciting beams. Moreover, intensit y of biexciton band overwhelmed the exciton band when the laser intens ities were over 88 MW/cm(2). Photofatigue effect and the effect of squ eezing of biexciton were also observed.