TRAP LEVEL SPECTROSCOPY IN K1-XLIXTAO3

Citation
P. Sangalli et al., TRAP LEVEL SPECTROSCOPY IN K1-XLIXTAO3, Journal of the Korean Physical Society, 32, 1998, pp. 811-813
Citations number
9
Categorie Soggetti
Physics
ISSN journal
03744884
Volume
32
Year of publication
1998
Part
2
Supplement
S
Pages
811 - 813
Database
ISI
SICI code
0374-4884(1998)32:<811:TLSIK>2.0.ZU;2-M
Abstract
We present results on thermally stimulated current (TSC) spectroscopy in K0.984Li0.016TaO3 and K0.966Li0.034TaO3 single crystals. Observatio ns were made in different poling conditions. Several trap levels were detected in the range 15 K - 310 K. Parameters for the deeper levels w ere derived by the Hoogenstraaten method. Shallow levels (hundredths o f an eV deep) can explain low temperature photocurrent and persistent current phenomena in terms of very efficient hole trapping.