EU DOPING EFFECT ON THE RADIATION-RESISTANCE IN BI4GE3O12 (BGO) SCINTILLATOR

Bi4Ge3O12 (BGO) that is well known as a scintillator was grown by a Cz ochralski method. The Eu-doped BGO crystal has higher radiation resist ance than the normal BGO crystal under the same irradiation condition. In order to understand a mechanism of radiation resistance in Eu-dope d BGO, fluorescence lifetimes, radiation induced-absorption, excitatio n, emission, and thermoluminescence spectra were studied for the diffe rent doses and at different temperatures. It is found that the shallow electron trapping centers due to Eu3+ ion and the charge transfer sta te of Eu3+ ion are playing a key role to the enhanced radiation resist ance in the Eu-doped BGO crystal.