C-V CHARACTERISTICS OF AL BAMGF4/SI(111) DIODES FABRICATED BY DRY-ETCHING PROCESS/

Characterization of Al/BaMgF4(BMF)/n-Si(111) diodes fabricated by dry etching process was presented. It was found in RIE (reactive ion etchi ng) experiments changing the Ar/Cl-2 ratio that etching process of BMF was dominated by physical sputtering rather than chemical reaction. I n an Al/BMF(120)/n-Si(111) diode fabricated by Ar-RIE process at 40 W RF power and the pressure of 30 mTorr (3.9 Pa), the leakage current de nsity of a BMF film was about 5 x 10(-8) A/cm(2) at 3 V and 1 MHz C-V characteristic of the diode showed the hysteresis loop with a memory w indow of 1.45 V due to the ferroelectric polarization. These values we re similar to those obtained in other diodes without etching process.