DOMAIN-STRUCTURE AND ELECTRICAL-PROPERTIES OF BETA-BAB2O4 SINGLE-CRYSTALS GROWN BY DIRECT CZOCHRALSKI METHOD

Citation
Aa. Plokhikh et al., DOMAIN-STRUCTURE AND ELECTRICAL-PROPERTIES OF BETA-BAB2O4 SINGLE-CRYSTALS GROWN BY DIRECT CZOCHRALSKI METHOD, Journal of the Korean Physical Society, 32, 1998, pp. 1231-1233
Citations number
6
Categorie Soggetti
Physics
ISSN journal
03744884
Volume
32
Year of publication
1998
Part
3
Supplement
S
Pages
1231 - 1233
Database
ISI
SICI code
0374-4884(1998)32:<1231:DAEOBS>2.0.ZU;2-9
Abstract
Domain structure of beta-BaB2O4 (BBO) crystals were determined by chem ical etching. It was found that crystals grown by the direct Czochrals ki method show mostly single-domain. Pyroelectric and piezoelectric pr operties of BBO were studied. Pyroelectric coefficient of BBO has posi tive sign and the value of the coefficient is p = (1.27 +/- 0.08) x 10 (-5) C/m(2)K. Piezoelectric strain coefficients were: d(33) = 0.15 x 1 0(-11) C/N, d(22) = 0.22 x 10(-11) C/N and d(31) = 0.049 x 10(-11) C/N . Electrical conductivity of BBO was measured as a function of tempera ture in range 340-720 degrees C. Arrhenius activation energy was 1.68 eV.