INFLUENCE OF LA IMPURITIES ON PBZRO3 DIELECTRIC PERMITTIVITY

Measurements of dielectric permittivity of nominally pure and doped by La impurities PbZrO3 ceramics samples were carried out at 300 K less than or equal to T less than or equal to 750 K and 50 Hz less than or equal to v less than or equal to 10(6) Hz. Dielectric permittivity wit h one and two maxima was observed respectively in PbZrO3 and PbZrO3 do ped by La ions. Strong dispersion was revealed both on the high temper ature side T > T-m and on low temperature T < T-m (T-m is dielectric p ermittivity maximum position in pure PbZrO3). New low temperature disp ersion origin was supposed to be the domain walls vibration in PbZrO3 antiferroelectric phase. The influence of La on phase diagram and diel ectric permittivity dispersion is discussed.