MEASUREMENT OF MICROWAVE DIELECTRIC-CONSTANT FOR FERROELECTRIC PB(ZR,TI)O-3 THIN-FILMS

Ferroelectric Pb(Zr-0.53, Ti-0.47)O-3[PZT] thin films with perovskite phase were grown by sol-gel spin-on processing using solutions contain ing metal-organic precursors of Pb, Zr, and Ti. In the range of 100 Hz to 2 GHz, the relative dielectric constants (epsilon(r)) of the PZT f ilms were measured as a function of frequency. For the high frequency measurement, a microstrip transmission line with the width of 20 mu m was patterned by using an Au(300 nm)/PZT(300 nm)/Pt(100 nm) multilayer him grown on SiO2/Si substrates. Measuring scattering parameters, the dielectric constant and dielectric loss of PZT films were determined using the characteristic impedance of the microstrip transmission line . It was observed that the PZT films have a dielectric constant of abo ut 800 and tan delta of about 0.02 at 1 GHz and room temperature, whic h were comparable to those obtained at the low frequency of less than 10 MHz.