TRANSISTOR OPERATION OF 30-NM GATE-LENGTH EJ-MOSFETS

We have fabricated electrically variable shallow junction metal-oxide- silicon field-effect transistors (EJ-MOSFET's) to investigate transist or characteristics of ultrafine-gate MOSFET's. By using EB direct writ ing onto an ultrahigh-resolution negative resist (calixarene), we achi eved a gate length of 32 nm for the first time. The short-channel effe cts were effectively suppressed by electrically induced ultrashallow s ource/drain regions, and the fabricated device exhibited normal transi stor characteristics even in the 32-nm gate-length regime at room temp erature: an ON/OFF current ratio of 10(5) and a cut-off current of 20 pA/mu m.