The unusual properties of two-dimensional electron systems that give r
ise to the quantum Hall effect have prompted the development of new mi
croscopic models for electrical conduction(1-6). The bulk properties o
f the quantum Hall effect have also been studied experimentally using
a variety of probes including transport(7,8), photoluminescence(9,10),
magnetization(11) and capacitance(12,13) measurements. However, the f
act that two-dimensional electron systems typically exist some distanc
e (about 1,000 Angstrom) beneath the surface of the host semiconductor
has presented an important obstacle to more direct measurements of mi
croscopic electronic structure in the quantum Hall regime. Here we int
roduce a cryogenic scanning-probe technique-'subsurface charge accumul
ation' imaging-that permits very high resolution examination of system
s of mobile electrons inside materials. We use this technique to image
directly the nanometre-scale electronic structures that exist in the
quantum Hall regime.