ATOMIC-SCALE EPITAXIAL-GROWTH OF BATIO3 THIN-FILMS BY LASER MOLECULAR-BEAM EPITAXY

By using laser molecular beam epitaxy (L-MBE), atomic scale epitaxial growth of BaTiO3(BTO) thin films on SrTiO3(STO) substrates is achieved . Measurements of reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy, and transmissi on electron microscopy reveal that the BTO films are c-axis oriented s ingle crystals with smooth surface. The multi-layer ferroelectric/supe rconducting heterostructures are also prepared and the ferroelectric p roperties of BTO films are studied. The results show that by using L-M BE technique, high quality BTO films and improved device performance c an be obtained.