PHOTOELECTRIC BEHAVIOR OF LATTICE-MATCHED GAAS ALXGA1-XAS QUANTUM-WELL ELECTRODES/

Authors
LIU Y XIAO XR ZENG YP YAN CH ZHENG HQ SUN DZ
Citation
Y. Liu et al., PHOTOELECTRIC BEHAVIOR OF LATTICE-MATCHED GAAS ALXGA1-XAS QUANTUM-WELL ELECTRODES/, Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences, 40(5), 1997, pp. 540-545
Citations number
9
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences → ACNP
ISSN journal
10016511
Volume
40
Issue
5
Year of publication
1997
Pages
540 - 545
Database
ISI
SICI code
1001-6511(1997)40:5<540:PBOLGA>2.0.ZU;2-A
Abstract
The photoelectric properties of the lattice-matched GaAs/AlxGa1-xAs qu antum well electrodes and the influence of the electrode structure suc h as well width, the thickness of outer barrier and the number of peri od were studied in a nonaqueous electrolyte. A new kind of structure o f multiple quantum well electrode with varied well width, possessing t he quantum yield three times that of GaAs bulk materials, was designed and fabricated.