HIGH-CONCENTRATION ARSENIC-DOPED SILICON HYDROGENATED BY MICROWAVE PLASMA

Authors
YOKOTA K HOSOKAWA K TERADA K HIRAI K TAKANO H KUMAGAI M ANDO Y MATSUDA K
Citation
K. Yokota et al., HIGH-CONCENTRATION ARSENIC-DOPED SILICON HYDROGENATED BY MICROWAVE PLASMA, Journal of the Electrochemical Society, 145(3), 1998, pp. 1028-1033
Citations number
18
Categorie Soggetti
Electrochemistry,"Materials Science, Coatings & Films
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
145
Issue
3
Year of publication
1998
Pages
1028 - 1033
Database
ISI
SICI code
0013-4651(1998)145:3<1028:HASHBM>2.0.ZU;2-1
Abstract
Silicon that is heavily doped with arsenic was treated in a microwave hydrogen plasma at temperatures of 530-600 degrees C. This hydrogenati on increased the carrier concentration in the surface region where the concentration of As exceeded about 2 x 10(20) cm(-3), but not in the more lightly doped regions. X-ray photoelectron spectroscopy leads us to propose that As clusters are dissociated by atomic hydrogen and tha t this declustering increases carrier concentration.