REACTIVITY OF ALKYLSILANES AND ALKYLCARBOSILANES IN ATOMIC HYDROGEN-INDUCED CHEMICAL-VAPOR-DEPOSITION

A number of alkylsilanes and alkylcarbosilanes of widely different mol ecular structure are characterized in terms of their ability to the fo rmation of amorphous hydrogenated silicon-carbon (a-Si:C:H) film in at omic hydrogen-induced chemical vapor deposition. The compounds contain ing only the Si-C bonds or four-membered carbosilane rings appear to b e inactive, while those with the Si-Si or Si-H bonds are capable of th e a-Si:C:H film-formation. The reactivity of the latter group of compo unds is characterized by the deposition yield parameter determined at the constant and variable feeding rates. Based upon the reactivity dat a a mechanism for the initiation step is proposed.