GROWTH OF GAN AND ALN THIN-FILMS BY LASER-INDUCED MOLECULAR-BEAM EPITAXY

Authors
GROSS M HENN G SCHRODER H
Citation
M. Gross et al., GROWTH OF GAN AND ALN THIN-FILMS BY LASER-INDUCED MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 16-19
Citations number
17
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
50
Issue
1-3
Year of publication
1997
Pages
16 - 19
Database
ISI
SICI code
0921-5107(1997)50:1-3<16:GOGAAT>2.0.ZU;2-C
Abstract
Hexagonal GaN and AIN thin films were grown by laser induced molecular beam epitaxy using Al or Ga metal as target material and N-2 as nitro gen source. The films were deposited on sapphire (0001) and SiC (0001) substrates. Epitaxial growth of GaN has been achieved at 730 degrees C and 10(-3) mbar N-2 pressure. The AlN films were polycrystalline wit h predominant (0001) orientation. (C) 1997 Elsevier Science S.A.