M. Gross et al., GROWTH OF GAN AND ALN THIN-FILMS BY LASER-INDUCED MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 16-19
Hexagonal GaN and AIN thin films were grown by laser induced molecular
beam epitaxy using Al or Ga metal as target material and N-2 as nitro
gen source. The films were deposited on sapphire (0001) and SiC (0001)
substrates. Epitaxial growth of GaN has been achieved at 730 degrees
C and 10(-3) mbar N-2 pressure. The AlN films were polycrystalline wit
h predominant (0001) orientation. (C) 1997 Elsevier Science S.A.