INITIAL-STAGES OF GROWTH OF GAN OVER (0001)AL2O3 SUBSTRATE USING MBE - A CRYSTALLOGRAPHIC ANALYSIS OF THE DEFECTS

Authors
POTIN V RUTERANA P NOUET G
Citation
V. Potin et al., INITIAL-STAGES OF GROWTH OF GAN OVER (0001)AL2O3 SUBSTRATE USING MBE - A CRYSTALLOGRAPHIC ANALYSIS OF THE DEFECTS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 29-31
Citations number
11
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
50
Issue
1-3
Year of publication
1997
Pages
29 - 31
Database
ISI
SICI code
0921-5107(1997)50:1-3<29:IOGOGO>2.0.ZU;2-8
Abstract
An AlN buffer layer grown on (0001) sapphire substrate by molecular be am epitaxy has been studied. It is found to be made of small grains ha ving a common [0001] axis parallel to that of the substrate. Some grai ns are rotated around this axis and the angle rotation can reach 20 de grees leading to a new epitaxial relationship (0001)(sap)/(0001)(AlN) and [11 (2) over bar 0](sap)/[21 (3) over bar 0](AlN). A model for the atomic structure of one of these grain boundaries is proposed using h igh resolution electron microscopy and extensive image simulation. (C) 1997 Elsevier Science S.A.